SOURCES SOUGHT
A -- Commercial Prototyping Photonics Technology
- Notice Date
- 4/24/2003
- Notice Type
- Sources Sought
- Contracting Office
- Department of the Navy, Naval Air Systems Command, Naval Air Warfare Center Aircraft Division Pax River, Building 441 21983 Bundy Road Unit 7, Patuxent River, MD, 20670
- ZIP Code
- 20670
- Solicitation Number
- N00421-03-R-0424
- Archive Date
- 5/24/2003
- Point of Contact
- Sandy Strong, Contract Specialist, Phone 301-757-9737, Fax 301-757-0200, - Vicki Fuhrmann, Contract Specialist, Phone (301) 757-9707, Fax 301-757-9760,
- E-Mail Address
-
strongsc@navair.navy.mil, fuhrmannvd@navair.navy.mil
- Description
- The Naval Air Systems Command/Naval Air Warfare Center Aircraft Division is planning to enter into a multiyear agreement for commercial prototyping process technology needed to fabricate prototype photonic integrated circuits (PIC's) having future applications to Navy and other military systems. This effort is planned as a Section 845 Other Transaction Agreement for Prototypes under 10 U.S.C. 2371 and is expected to include established collaboration between a PIC design contractor, process tooling manufacturer(s), volume manufacturing contractor(s), and a university. Likewise, to facilitate timely transition to military systems, the team must also have established strategic partners for defining both military and commercial requirements for significant advancements in US Military operations through the integration of optical and electrical functions into advanced electro-optic devices. A PIC prototyping research and development (R&D) facility to be located in the State of Hawaii must be capable of prototyping methods for fabrication and processing of 200mm wafers containing SOI (Silicon-on-Insulator)-based photonic media including: (1) methods for MOCVD growth of III-V semiconductors and other materials (including advanced multi-layer photonic materials); (2) cleaning; (3) advanced lithography; (4) doping; and (5) etching for compound semiconductor devices. This facility must also be able to handle SOI wafers with integrated crystalline Ge layers. R&D of these Ge/SOI materials will extend to prototyping of methods to integrate CMOS logic circuits, heterogeneous layers of compound semiconductors as well as optical signal conduction layers. The back end of the line process development will include testing of advanced opto-electronic devices. Interested contractor teams should notify the Agreements Officer representative via e-mail at strongsc@navair.navy.mil. This expression of interest must include a white paper not more than 5 pages in length detailing the potential team?s complement, areas of expertise, and capabilities and relative experience in developing comparable facilities. White papers should be submitted via e-mail to strongsc@navair.navy.mil no later than May 9, 2003.
- Place of Performance
- Address: State of Hawaii
- Country: USA
- Country: USA
- Record
- SN00311374-W 20030426/030424213818 (fbodaily.com)
- Source
-
FedBizOpps.gov Link to This Notice
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