SPECIAL NOTICE
A -- RECOVERY--A--PROJECT NUMBER , High Temperature Silicon Carbide (SiC) Power Semiconductors (Applied Research)
- Notice Date
- 2/11/2010
- Notice Type
- Special Notice
- NAICS
- 541712
— Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)
- Contracting Office
- RDECOM Contracting Center - Durham (RDECOM-CC), ATTN: AMSSB-ACR, Research Triangle Park Contracting Division, P.O. Box 12211, Research Triangle Park, NC 27709-2211
- ZIP Code
- 27709-2211
- Solicitation Number
- DAAD19-00-R-0005
- Archive Date
- 5/12/2010
- Point of Contact
- Julia Wertley-Rotenberry, 919-549-4268
- E-Mail Address
-
RDECOM Contracting Center - Durham (RDECOM-CC)
(julia.wertleyrotenberry@us.army.mil)
- Small Business Set-Aside
- N/A
- Description
- RECOVERY - PER FAR 5.7 THIS NOTICE IS PROVIDED FOR INFORMATION PURPOSES ONLY; THEREFORE FAR 5.203 DOES NOT APPLY. THIS OPPORTUNITY IS AVAILABLE ONLY TO CONTRACTOR(S) UNDER THE CURRENT CONTRACT NUMBER(S): HONEYWELL INTERNATIONAL DAAD19-01-C-0067 POWER AND ENERGY COLLABORATIVE TECHNOLOGY ALLIANCE This is a notice of the intent to award Task Order 4 to contract DAAD19-01-C-0067. The purpose of this Task Order (TO) is to develop silicon carbide (SiC) device technologies used in advanced Army platform power systems. Improvements in components technologies under this task order will allow Army power systems in wheeled and mobile platforms to meet performance requirements while providing improved reliability in harsh conditions. Advanced, high-temperature, SiC switches and low-loss passive components will enable more compact and reliable power conversion systems resulting in higher platform performance and fuel economy. SiC based modules with integrated cooling will allow further reduction in platform weight and volume by improving cooling system efficiency. This program is a research program and as such deliverables will include research quantities of the materials, designs, and other documentation describing results. This research is intended to: Demonstrate 0 micropipe SiC materials to increase device/system reliability. Improve Army power electronics efficiency up to 70% with high-temperature SiC devices operating at 100 A 1200 V. Increase platform efficiency & performance through low loss power modules that utilize high thermal flux, low flow loss cooling. Provide low loss capacitor and inductor materials that operate reliably above 125C. This task order will be subject to the ARRA clauses of the FAR as well as all ARRA reporting requirements. Funds must be fully disbursed by 30 September 2011.
- Web Link
-
FBO.gov Permalink
(https://www.fbo.gov/notices/5cb18ae379adde8776d21ca62ec4d7f5)
- Record
- SN02063488-W 20100213/100211234830-5cb18ae379adde8776d21ca62ec4d7f5 (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
(may not be valid after Archive Date)
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