SPECIAL NOTICE
99 -- Notice of Intent to Sole Source - Oxford ICP PECVD System
- Notice Date
- 2/8/2022 1:35:55 PM
- Notice Type
- Special Notice
- NAICS
- 334516
— Analytical Laboratory Instrument Manufacturing
- Contracting Office
- DEPT OF COMMERCE NIST GAITHERSBURG MD 20899 USA
- ZIP Code
- 20899
- Solicitation Number
- NIST-AMD-NOI-22-00803
- Response Due
- 2/23/2022 2:00:00 PM
- Point of Contact
- Forest Crumpler
- E-Mail Address
-
forest.crumpler@nist.gov
(forest.crumpler@nist.gov)
- Description
- The United States Department of Commerce (DOC), National Institute of Standards and Technology (NIST), Acquisition Management Division (AMD) intends to negotiate a firm fixed price purchase order, on a sole source basis, with Oxford Instruments America, inc of 300 Baker Ave, Suite 150, Concord, MA 01742-2204 for the purchase of one (1) ICP PECVD system. The statutory authority for this sole source acquisition is FAR 13.106-1(b) by the authority of FAR Part 13 Simplified Acquisition Procedures.� The National Institute of Standards and Technology (NIST) and Center for Nanoscale Science and Technology (CNST) NanoFab intend to procure a wide?temperature range inductively coupled plasma enhanced chemical vapor deposition (ICP CVD) system (quantity: 1) with a heated electrode capable of heating substrates between 50 degrees Celsius and 800 degree Celsius during the deposition process of silicon dioxide, silicon nitride, silicon oxynitride, TEOS, amorphous silicon and silicon carbide. The added capability of the depositing variety of high quality thin ICP CVD films over the enhanced temperature range, will allow for users to employ thin films: as sacrificial layers in microelectromechanical systems; in cladding layers in nanophotonic and optomechanical structures; as metamaterial stack layers; and dielectric layers in electronics applications. We will develop methods of depositing thin films with tailored material (stress/stoichiometry/refractive index) properties in the CNST NanoFab as a resource accessible to NIST and external researchers. The Contractor shall provide a ICP PECVD system, (Quantity: 1) that meets the following minimum specifications: � The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall accommodate substrate sizes up to 150�mm diameter, semi?spec silicon wafers. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall be equipped to load: a 100�mm semi?spec silicon wafer substrate. a 150�mm semi?spec silicon wafer substrate. small pieces down to 5�mm by 5�mm shall be accommodated on top a carrier substrate. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall allow deposition of silicon oxide, silicon nitride films, silicon oxynitride, TEOS, amorphous silicon, and silicon carbide. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have recipes for the deposition of silicon (di)oxide, silicon nitride films, silicon oxynitride, silicon (di)oxide using a TEOS precursor, amorphous silicon and silicon carbide. The system shall be equipped with a variable wavelength optical end?point?detection. The system shall also have appropriate cleaning recipes that utilize endpoint detection to help assess chamber cleanliness and requisite cleaning times. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a Gas Pod with 12 lines equipped with: Gas?line heating kit for non?toxic gas lines. 10 standard gas lines with mass flow controllers for non?toxic gases. 2 bypassed gas lines with mass flow controllers for toxic gases. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a heated electrode that can operate between 50 degrees Celsius and 800 degree Celsius. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a 3�kW 2�MHz RF generator connected to a 300�mm diameter ICP source via a vacuum capacitor automatic matching network unit. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a vapor delivery module to allow for bubble?mode precursor delivery with precursor monitoring sensor used for the deposition or TEOS. Deposited films shall have a deposition rate and refractive index control that is independent of wafer loading. The deposited thin film uniformity within?wafer for the silicon (di)oxide, silicon nitride films, silicon oxynitride, silicon (di)oxide using a TEOS precursor, amorphous silicon and silicon carbide films shall be less than plus?or?minus 5�% for 100�mm semi?spec silicon substrates with a 5�mm exclusion zone. Wafer to wafer deposition repeatability for the silicon (di)oxide, silicon nitride films, silicon oxynitride, silicon (di)oxide using a TEOS precursor, amorphous silicon and silicon carbide films shall be less than plus?or?minus 5�% for 100�mm semi?spec silicon substrates. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall be equipped with chamber clean recipes that allow for wafer?to?wafer deposition repeatability between different thin?film deposition processes. Using 100�% silane gas chemistry for the source of silicon, the wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a deposition rate greater than or equal to 100�nm/min at a temperature of 140�degrees Celsius for the silicon oxide, silicon nitride films, silicon oxynitride, and amorphous silicon. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a tunable index of refraction (measured at the HeNe wavelength of 632.8�nm) range between: 1.44 and 1.46 for silicon dioxide 1.95 and 2.05 for silicon nitride The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall deposit silicon dioxide and silicon nitride films with stress levels ranging between plus?or?minus 300�MPa. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have wet etch rates in 10:1 buffered hydrofluoric acid of: Less than 100�nm/min for silicon dioxide Less than 30�nm/min for silicon nitride The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall use a TEOS precursor to produce silicon (di)oxide films with improved conformality in step coverage compared to silane-based films.� In particular, step coverage with >75�% conformality for sub-micrometer step height, defined as the ratio of the film thickness on the side surface of a step to the film thickness on the top surface of the step. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall be equipped with a load?lock. The system shall allow automatic transfer of substrates between the load?lock and the main chamber. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall allow for changeover between 100�mm and 150�mm hardware. When the chamber is cooled down and vented, the duration for the changeover between 100�mm and 150�mm hardware shall be less than 30 minutes. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system control software shall run on the latest Windows operating system. The software shall allow for recipe editing and saving. During tool operation, process parameters such as gas flows, pressure, temperature, recipe name, and process step duration and countdown shall be displayed on the main screen. The software shall allow for datalogging. The software shall save the data?log files in ASCII format. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system control software shall allow for: Automatic recipe operation in user mode. Manual operation in administrator mode. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall be equipped with a complete pumping system. The electrical utility requirement for the wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall be standard US 208�V, 60�Hz 3?phase supply configuration. The wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system shall have a minimum of 1-year warranty from date of government acceptance. The vendor shall repair or replace at its cost, any defective items without any additional cost to the government including travel, labor, parts, or any other expense. The seller shell coordinate shipment and installation of the wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system with the end user. The seller shall provide an onsite install and process engineer for the installation and qualification of the wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system. The seller shall provide training on the wide?temperature range inductively coupled plasma enhanced chemical vapor deposition system for the end user. Research has found that only one (1) company can offer a wide?temperature range ICP PECVD system that can meet the performance specifications.� The North American Industry Classification System (NAICS) code for this acquisition is 334516 � Analytical Laboratory Instrument Manufacturing, and the size standard is 1,000 employees. No solicitation package will be issued. This notice of intent is not a request for competitive quotations; however, all responsible sources interested may identify their interest and capability to respond to this requirement. The Government will consider responses received by 5:00 p.m. Eastern on February 23, 2022. Inquiries will only be accepted via email to forest.crumpler@nist.gov . No telephone requests will be honored. A determination by the Government not to compete the proposed acquisition based upon responses to this notice is solely within the discretion of the Government. Information received will normally be considered solely for the purpose of determining whether to conduct a competitive procurement in the future.
- Web Link
-
SAM.gov Permalink
(https://sam.gov/opp/b540a4e75bde41d89c0ec203e15a1936/view)
- Place of Performance
- Address: Gaithersburg, MD 20899, USA
- Zip Code: 20899
- Country: USA
- Record
- SN06235832-F 20220210/220209211714 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
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