Loren Data's SAM Daily™

SAMDAILY.US - ISSUE OF MAY 26, 2023 SAM #7850
SPECIAL NOTICE

A -- Semiconductor Electrical Modeling for In-Space Memory Manufacturing

Notice Date

5/24/2023 11:41:45 AM
 

Notice Type

Special Notice
 

NAICS

541715 — Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology)
 

Contracting Office

NASA SHARED SERVICES CENTER STENNIS SPACE CENTER MS 39529 USA
 

ZIP Code

39529
 

Solicitation Number

80NSSC23835339Q
 

Response Due

5/29/2023 7:00:00 AM
 

Point of Contact

Kimberly Sandoz
 

E-Mail Address

kimberly.r.sandoz@nasa.gov
(kimberly.r.sandoz@nasa.gov)
 

Description

Statement of Work Semiconductor Electrical Modeling for In-Space Memory Manufacturing Principle Investigator: Electrical and Computer Engineering, Arizona State University Duration: May 2023 � March 2024 Project Overview: With the increasing demand of computing, in-space memory manufacture enables the rapid prototyping and open the era of semiconductor chips manufactures High efficient, low cost and high functionality of chips manufactured in the zero-G environment through the inkjet printing process. Printing manufacturing is also useful for fabrication of high-density memory as three-dimensional design. These features are critical for NASA missions. Achieving high accuracy and resolution are the major challenges in improving the printing quality. As emerging printing device and evaluation methods are being invented, defect and failure model also need to be developed to maximize the printable semiconductor device technology. Our lab has developed a memory electrical-materials characterization methodology for evaluating the thin-film memory by printing technology. Our preliminary data has the current-voltage (I-V) characteristics, time-dependent speed evaluation (~ns), and numerical fitting for current transport mechanisms understanding. In addition, the radiation effect on thin-film memory window and switching performance were investigated in our preliminary results. We propose to work closely with Intel and NASA Marshall Space Flight Center (MSFC) On-Demand Manufacturing of Electronics (ODME) systems, Space enable advanced device and semiconductor (SEADS). The objective is to conclude the groundwork with PVD thin film evaluation and device characterization to support the preliminary results for flight test scheduled in August 2023. We will characterize the performance and reliability for printed memory in our lab by DC/AC measurement, accelerated failure industrial test, and temperature-accelerated retention failure, after the test flight bringing back the devices. Besides, device and fabrication process will be optimized by materials analysis results with KLA Tencor Profilometer, four-point probe, scanning electron microscopy (SEM), and transmission electron microscopy (TEM) at ASU, before the test flight in August. Semiconductor device properties, especially the electrical characteristics and thin film deposited on the patterned wafer with sub-micron trenches, will be tailored to help optimizing the memory structures and design. Based on benchmarking the current transport and defect in devices, the process can be advanced to the future oxide-based transistor-memory integration co-design.
 

Web Link

SAM.gov Permalink
(https://sam.gov/opp/6cccdad82f404e77ac9e3947f8faa6ff/view)
 

Place of Performance

Address: Huntsville, AL 35812, USA

Zip Code: 35812

Country: USA
 

Record

SN06692667-F 20230526/230524230112 (samdaily.us)
 

Source

SAM.gov Link to This Notice
(may not be valid after Archive Date)

---

| FSG Index  |  This Issue's Index  |  Today's SAM Daily Index Page |