R&D Contracting Division, Bldg 7, 2530 C St, WPAFB OH 45433-7607

A -- DIRECT WRITE EPITAXY FOR III-V SEMICONDUCTORS SOL PRDA 95-08-MLK DUE 030795 POC Bobbi Cunningham, Contract Negotiator, 513-255-5830 or Bruce Miller, Contracting Officer, 513-255-5830. A--INTRODUCTION: Wright Laboratory (WL/MLPO) is interested in receiving proposals (technical and cost) on the research effort described below. Proposals in response to this PRDA shall be submitted by 07 March 1995, 1500 hours, addressed to Wright Laboratory, Directorate of R&D Contracting, Bldg 7, 2530 C St., Attn: Bobbi Cunningham, WL/MLKM, Wright-Patterson AFB, OH 45433-7607. This is an unrestricted solicitation. Small businesses are encouraged to propose on all or any part of this solicitation. Proposals submitted shall be in accordance with this announcement. Proposals received after the cutoff date specified herein shall be treated in accordance with restrictions of FAR 52.215-10, copy of this provision may be obtained from the contracting point of contact. There will be no other solicitation issued in regard to this requirement. Offerors should be alert for any required PRDA amendments that may be published. Offerors should request a copy of the WL Guide entitled, ''PRDA and BAA Guide for Industry''. This guide was specifically designed to assist offerors in understanding the PRDA/BAA process. Copies may be requested from the contracting point of contact. B--REQUIREMENTS: (1) Technical Description: The objective of this program is to develop a direct write selective area epitaxial growth process for III-V semiconductor materials. The Air Force has a need for ''multi-function chips'' in which more than one function are performed on the same electronic chip, such as radar transmit/receive or infrared detection coupled with digital processing, or high speed digital processing with electro-optical transmit/receive for interconnections. These different functions require different semiconductor materials which often have significant lattice mismatch between each other and the common substrate. The present technology requires that wafers be patterned externally with standard lithography techniques then inserted in the epitaxial growth chamber. This program will develop techniques that will eliminate the external patterning steps. In particular, research is required to develop enabling technology for the demonstration of epitaxy techniques for the growth of III-V semiconductor compounds and alloys of different composition on the same wafer. The resulting material should be of such a composition and quality so as to permit the fabrication of electronic devices with different functionality on the same chip. While there are no specifications on the size of epitaxial ''islands'' grown, it is expected that the technology used will be competitive in the dimensions that might be achieved at maturity with lithographical techniques presently available. This program is specifically restricted to in-situ, direct-write techniques such as photo-assisted epitaxy. It is expected that the growth of at least two different compounds or alloys on the same substrate will be demonstrated during the program. While not required, growth of lattice mismatched materials is encouraged. Actual device demonstration is not required or expected but the epitaxial material shall be fully characterized as to the structural, chemical and electronic quality. Approaches requiring external (that is, outside of the epitaxial growth chamber and any integral equipment) patterning of the substrate will not be considered to be responsive. (2) Deliverable items: The following deliverable data items shall be proposed: (a) DI-FNCL-80331/T Funds and Man-Hour Expenditure Report, monthly, (b) DI-MGMT-80507/T Project Planning Chart, quarterly, (c) DI-MGMT-80368 Status Report, quarterly, (d) DI-F-6004B/T Contract Funds Status Report, quarterly, (e) DI-MISC-80711/T Scientific and Technical Report, Interim Technical Report, annually, (f) DI-ADMIN-81373/T Presentation Material, as required, (g) DI-MISC-80711/T Scientific and Technical Report, Final Report (Draft and Reproducible Final), (h) DI-MISC-80711/T, Scientific and Technical Reports, Contractor's Billing Voucher, monthly, (i) DI-MISC-80711/T Scientific and Technical Reports, Environmental Assessment Report, one time, (j) Representative samples of epitaxial material for testing by the government shall be required annually and at the end of the contract (4 lots). Samples shall include both compounds and alloys and shall be a total of at least 1 square inches of substrate each with four (4) samples per lot. The contractor shall as a minimum be required to review the program at the start of the program, annually and at the end of the program (4 reviews) at Wright-Patterson AFB or the contractor's facility. It is likely that the reports resulting from this effort will be assigned distribution statement C (limited to U.S. Government agencies and their contractors, critical technology) and the appropriate export control warning statement will be required. (3) Security Requirements: It is anticipated that work performed under this contract will be unclassified and that performance of the effort will not require access to classified material. Offerors are required, however, to have a DD Form 2345 covering pertinent technology with the Defense Logistics Service Center (DLSC), Battle Creek, MI 49016. (4) Other Special Requirements: It is expected that International Trade in Arms Restrictions will apply. C--ADDITIONAL INFORMATION: (1) Anticipated Period of Performance: The total length of the technical effort is estimated to be 36 months. The contractor shall also provide for an additional five months for processing/completion of the final report. (2) Expected award date: 1995 Aug. (3) Government Estimate: The Government funding profile is estimated to be as follows: FY95-$10K, FY96-$300K, FY97-$300K, FY98-$290K. This funding profile is an estimate only and is not a promise for funding as all funding is subject to change due to Government discretion and availability. (4) Type of Contract: Cost Plus Fixed Fee (CPFF) or Cost (no fee). Any grants awarded will be cost (no fee). (5) Government Furnished Equipment: None. (6) Size Status: For the purpose of this acquisition, the size standard is 500 employees. (SIC 8731). (7) Notice to Foreign Owned Firms: Such firms are asked to immediately notify the Air Force point cited below upon deciding to respond to this announcement. Foreign contractors should be aware that restrictions may apply which could preclude their participation in the acquisition. D--PROPOSAL PREPARATION INSTRUCTIONS: (1) General Instructions: Offerors should apply the restrictive notice prescribed in the provision at FAR 52.215-12, Restriction on Disclosure and Use of Data, to trade secrets or priviledged commercial and financial information contained in their proposals. Proposal questions should be directed to one of the points of contact listed elsewhere herein. Offerors should consider instructions contained in the WL PRDA and BAA Guide for Industry referenced in Section A of this announcement. Technical and cost proposals, submitted in separate volumes, are required and must be valid for 180 days. Proposals must reference the above PRDA number. Proposals shall be submitted in an original and five copies. All responsible sources may submit a proposal which shall be considered against the criteria set forth herein. Offerors are advised that only contracting officers are legally authorized to contractually bind or otherwise commit the government. (2) Cost Proposal: The accompanying cost proposal/price breakdown shall be supplied on an SF 1411, together with supporting schedules and shall contain a person- hour breakdown per task. Copies of the above referenced forms may be obtained from the Contracting Office cited below. (3) Technical Proposal: The technical proposal shall include a discussion of the nature and scope of the research and the technical approach. Additional information on prior work in this area, descriptions of available equipment, data and facilities, and resumes of personnel who will be participating in this effort should also be included in the proposal and will count against the page limit. The technical proposal shall include a Statement of Work (SOW) detailing the technical tasks proposed to be accomplished under the proposed effort and suitable for contract incorporation. Offerors should refer to the WL Guide referenced in Section A to assist in SOW preparation. PL 98094 applies. Any questions concerning the technical proposal or SOW preparation shall be referred to the Technical Point of Contact cited in this announcement. (4) Page Limitations: The technical proposal shall be limited to 100 (12 pitch or larger type) 8 1/2'' X 11'' double spaced, single sided pages. The page limitation includes all information, i.e. indexes, photographs, foldouts, appendices, attachments, etc. Pages in excess of this limitation will not be considered by the government. Cost proposals have no limitations, however, offerors are requested to keep cost proposals to 75 pages as a goal. (5) Preparation Cost: This announcement does not commit the Government to pay for any response preparation cost. The cost of preparing proposals in response to this PRDA is not considered an allowable direct charge to any resulting or any other contract. However, it may be an allowable expense to the normal bid and proposal indirect cost as specified in FAR 31.205-18. E--BASIS FOR AWARD: The selection of one or more sources for award will be based on an evaluation of an offeror's response (both technical and cost aspects) to determine the overall merit of the proposal in response to the announcement. The technical aspect, which is ranked as the first order of priority, shall be evaluated based on the following criteria which are of equal importance: (a) new and creative solutions, (b) The offerors understanding of the scope of the technical effort, including a demonstration of knowledge of the state-of-the-art in direct write epitaxy, and an understanding of proposed epitaxy techniques as applied to III-V semiconductors, (c) soundness of offeror's technical approach, including as a minimum the proposed approach for development of a direct-write selective area epitaxy technique, the experimental details of the proposed approach and the proposed material testing and characterization procedures, (d) the availability of qualified technical personnel and their experience with the growth and evaluation of epitaxial material, (e) the offeror's experience with epitaxial growth of semiconductor materials in general and applicable selective area epitaxy technique in particular, and (f) organization, clarity, and thoroughness of the proposed SOW. Cost, which includes consideration of proposed budgets and funding profiles, is ranked as the second order of priority. No other evaluation criteria will be used. The technical and cost information will be evaluated at the same time. The Air Force reserves the right to select for award of a contract, grant or cooperative agreement any, all, part, or none of the proposals received. Award of a grant to universities or nonprofit institutions or cooperative agreement, in lieu of a contract, will be considered and will be subject to the mutual agreement of the parties. F--POINTS OF CONTACT: (1) Technical Contact Point: Dr. William C. Mitchel, WL/MLPO, Wright-Patterson AFB, OH 45433-7707, (513) 255-4474 ext. 3252. (2) Contracting/Cost Point of Contact: Questions related to contract/cost issues should be directed to the Wright Laboratory, Directorate of R&D Contracting, Bobbi Cunningham, WL/MLKM, 2530 C Street, Wright-Patterson AFB, OH 45433-7607, (513)-255-5830. (0013)

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