59 -- INSULATED GATE BIPOLAR TRANSISTOR WAFERS

Notice Date

January 26, 2001

Contracting Office

Naval Research Laboratory, Attn: Code 3420, 4555 Overlook Ave. SW, Washington, DC 20375

ZIP Code

20375

Solicitation Number

N00173-01-Q-0044

Point of Contact

Darlene Copp, Contracting Officer, 202-767-2374

E-Mail Address

click here to contact contracting officer via e-mail (SolQnA@labmis.nrl.navy.mil)

Description

Naval Research Laboratory (NRL) intends to solicit and negotiate with Dynex Semiconductor LTD on other than full and open competitive basis to populate 50 each NRL supplied 100mm diameter float zone silicon wafers with fabricated high voltage insulated gate bipolar transistor (IGBT) with breakdown voltage greater than 3000V. Sole Source is critical to compatibility with a double-side bonding tool currently in use at NRL. "See Note 22."

Record

Loren Data Corp. 20010130/59SOL010.HTM (W-026 SN50B9G7)