66 -- INDUCTIVELY COUPLED PLASMA (ICP) ETCHING SYSTEM

Notice Date

August 21, 2001

Contracting Office

Department of Commerce, Mountain Administrative Support Center, Acqusition Management Division, MC3, 325 Broadway, Boulder, Co 80305-3328

ZIP Code

80305-3328

Solicitation Number

52RANB10C034

Response Due

September 18, 2001

Point of Contact

Procurement Technicians, 303.497.3221

E-Mail Address

Click here to submit questions to the Contracting (douglas.hargrove@noaa.gov)

Description

This is a combined synopsis/solicitation for commercial items prepared in accordance with the format in FAR Subpart 12.6, as supplemented by additional information included this notice and in accordance with the simplified acquisition procedures authorized in FAR Part 13. This announcement constitutes the only solicitation; proposals are being requested and a written solicitation will NOT be issued. The solicitation number is 52RANB10C034 and is issued as a request for proposals (RFP). The solicitation document and incorporated provisions and clauses are those in effect through Federal Acquisition Circular 97-27. The NAICS Code is 333295, and the small business size standard is 500 employees. Any amendment(s) hereto will only be published in the Commerce Business Daily. The National Institute of Standards and Technology (NIST) requires an Inductively Coupled Plasma (ICP) etching system for research and development and for single wafer processing. The system shall be inherently designed for high aspect-ratio anisotropic etching of silicon. The system shall be a current production model, not a prototype or one-of-a-kind system. The system shall be capable of through-the-wafer etching of up to 500 micrometer thick wafers, shall have a high degree of etching selectivity over silicon dioxide, silicon nitride, and photoresist. It shall be capable of, but not restricted to operating using the etching process commonly known as the "Bosch process" and the vendor shall be licensed to provide users with this process. Major components of the system shall be off-the-shelf, readily available parts, not custom-made. The system shall be delivered with high aspect etching processes that meet the following specifications.....REQUIRED ITEM 0001: ....1: Hardware Specifications.....1.1 General: Equipment shall be a current year production model and not a prototype or one-of- a-kind system. There shall be at least 5 working units of the proposed make and model operating currently in the field. Any substitutions of normally used major system components, such as software, power-supplies, load-lock mechanisms, vacuum valves, gauges and pumping equipment required to meet these specification shall be clearly noted in the proposal. All equipment, excluding the rough vacuum pump shall be Class 100 clean-room compatible, designed to sit entirely within the cleanroom. All clean-room equipment shall be housed entirely within a 1.5 meter by 2.2 meter (5 by 7 foot) footprint, including hook-ups to house facilities, such as gas line connections and vacuum lines, which will pass through the wall of the cleanroom. The model which is to be offered shall have a demonstrated 95% up-time. Down time shall be calculated from the time the equipment fails to function properly to the time it is repaired and recovers normal functions.....1.2 Pumping / Gas Handling: The system shall contain a high vacuum pumping system as required to perform the necessary processes with high etch rates. The vacuum shall be sufficient to maintain process stability and repeatability from wafer to wafer and run to run. The roughing pump shall be sized appropriately to deliver the required pumping speed to maintain high vacuum and to evacuate vacuum chamber and load-lock. All pumps shall be rated for long up-time use with the effluent expected in the proposed plasma etch processes. The system shall have appropriate vacuum gauges and displays for measuring both high (ion or cold-cathode gauge) and process (capacitance manometer) vacuum regions. Additional gauges for monitoring the load-lock and roughing lines shall also be provided. The gas manifold shall be constructed of all orbital welded , stainless steel, with VCR fittings on all process gas lines. The vendor shall supply mass flow controllers of sufficient quantity and flow rate to operate the proposed process and shall provide an excess of at least 2 mass flow controllers plumbed into the gas manifold, equipped with VCR fittings and capped off, and controllable by the computer control system through the computer software. Additionally, the system shall provide a means to rapidly switch from one flow recipe to another as required by the "Bosch process." The System shall provide active control of process gas pressure.....1.3 Process Chamber and Load Lock: The system shall be equipped with a manually loaded, automated wafer delivery load- lock. The load lock shall be capable of loading or unloading the wafer from/to the atmosphere load station to/from the process chuck in less that 5 minutes. The load lock shall be capable of handling both single-side and double-side polished wafers of varying thicknesses (50 micrometer to 500 micrometer). The operation of the load lock shall not be affected by dielectric or metallic films deposited on either side of the wafer. The system shall be delivered equipped to handle one 75 mm (3 inch) wafer. Additionally, the system (load-lock and process chamber) shall be capable of being adapted to accommodate 100 mm, 125 mm or 150 mm wafers. This change of wafer size shall be able to be performed within a maximum 8 hours of installation time with the optional future purchase of the necessary components. Wafer cooling shall be provided by the process chamber chuck to maintain the proper temperature necessary to ensure optimization of etching parameters, etching repeatability, wafer uniformity, and process stability from wafer-to-wafer. The process chuck shall be capable of providing cooling in excess of that normally required to etch a single wafer in the event that partial wafers or chips are etched by being attached to backing wafers. The wafer chuck shall use either mechanical or electrostatic clamping as a means of securing the wafer and containing the helium gas used for heat conduction to the cold bath. The chuck temperature shall be controllable over the range of temperatures needed for the proposed process. Operation of the chuck at cryogenic temperatures is desirable but not required. The system shall provide an indication of improper chuck operation (for example, loss of helium (He) backside pressure or excess He flow). The proposal shall describe the areas masked by any front side clamping, as well as the size of any regions that suffer from non-uniformity due to front side clamping. The system shall be designed for easy internal cleaning. It is well known that exposing certain materials to the plasma in the "Bosch process" can have unpredictable results, often requiring mechanical cleaning of interior process chamber components in order to return the system to its original working condition. Furthermore, in addition to the deep etching of Si, the Government is interested in developing processes to achieve high aspect ratios in thick metal multilayer stacks (for example Nb/Ti). It is very important that the system can be completely cleaned in a short time in order to allow NIST to schedule our work efficiently. The proposal shall describe cleaning methods to be used and give an estimate of the time necessary to clean the system. The system shall be compatible with the optional or later addition of endpoint monitoring equipment (see section 4 below). This includes appropriate optical feedthroughs for the laser interferometric and plasma emission endpoint systems. The system shall contain RF/DC process power supplies as required to deliver the appropriate plasma processing environment.....1.4 Control Systems: Interlocks and/or system feedback circuits and sensors shall be provided to ensure proper and safe shut-down of the system and halting of any ongoing process in the event of failures including but not limited to: cooling water loss, high/low pressure, abnormal gas flow rates (e.g. loss of any process gas flow), and high reflected RF power. The equipment shall be inherently designed for safe recovery from a power outage during operations or while in the stand-by mode. The system shall be equipped with a PC interface and Windows-based computer controlled software. Software shall be designed with clear, intuitive block diagrams of major system schematics. The system shall have the ability to enter and run new process recipes. The PC shall be equipped with a means of backing up and restoring process recipes and system software. Acceptable solutions include a 3.5" floppy drive, a zip drive or a networked connection. The system shall meet OSHA standards for operator safety and SEMI standards for environmental safety. The system shall be equipped with an easily accessible emergency mushroom- button shut-off switch, red in color, which when activated, safely turns off any ongoing process and closes all process gas valves without causing damage to a sample in process during the shut-down procedure.....2. Process and Performance Specifications: Proposals shall include descriptions of processes capable of complying with the following specifications as well as data demonstrating the following performance abilities.....2.1: The system shall be capable of etching deep, narrow trenches or holes in silicon (Si) with an aspect ration of at least 20:1, with sidewalls controllable to within 90 degrees +/- 0.5 degrees. Aspect ratios no less than 35:1 shall be obtainable with sidewalls controllable to 90 degrees +/- 3 degrees.....2.2: The system shall be capable of etching high narrow walls or pillars in Si with an aspect ration of at least 20:1, with sidewalls controllable within 90 degrees +/- 0.5 degree. Aspect ratios no less than 35:1 shall be obtainable with sidewalls controllable to 90 degrees +/- 3 degrees.....2.3: For the etches described above, the selectivity for Si:SiO2 shall be at least 200:1, and the selectivity for Si:photoresist shall be at least 75:1.....2.4: The system shall obtain an etch uniformity +/- 3% of the mean etch rate across a 75 mm wafer.....2.5: The system shall be capable of etching with a rate of at least 7 micrometer per minute with sidewalls remaining vertical to within 90 degrees +/- 3 degrees , and no less than 1 micrometer per minute with sidewalls controlled to 90 degrees +/- 1 degree.....2.6: The system shall be capable of etching through 500 micrometer silicon while maintaining the above specified sidewall profiles and aspect ratios, and stop on a buried silicon dioxide film with minimal (< 100 nm) undercutting of the silicon at the Si:SiO2 interface.....2.7: Chamber, gas flow, RF power and all other process parameters shall be stable and capable of providing reproducible results from wafer to wafer, run to run, and process to process, without the necessity for lengthy conditioning procedures. (i.e. all of the above etch uniformity parameters shall be repeatable within the boundary values given above regardless of number of wafers processed, or previous chamber history).....2.8: The system and inherent processes required to provide the functions above, shall utilize gases with fluorine based chemistries only. Chlorine gases, combustible gases, or corrosive process gases are unacceptable.......3:. Installation, Documentation and Warranty:.....3.1 The proposal shall provide a complete list of facility installation requirements for process gases, chilled water, electrical power, and vacuum exhaust. The process gas requirements for flow rates, fitting size, fitting type, and pneumatic pressure shall be specified. The chilled water requirements for flow rate, temperature, water resistivity, and fitting size/type shall be specified. The electrical requirements for current, voltage and circuit breaker shall be specified. The vacuum exhaust requirements for flow rate, fitting size and type, and maximum piping length shall be specified. The proposals shall include installation drawings specifying the system footprint, weight, and connection locations of all required facility connections. The dimensions of the cleanroom entrance are 1.17 meters wide by 2.1 meters high (46 inches by 82.5 inches). The system shall be able to be transported into the clean room without modifications to either the system or the building structure.......3.2: The system shall be provided with a complete set of system electrical, vacuum and plumbing schematics including control schematics, and a complete set of operations and maintenance manuals. All manuals shall be printed on cleanroom paper and bound in cleanroom binders.....3.3: The system shall undergo pre-acceptance testing at the manufacturer's facility and shall demonstrate process performance as required above prior to being accepted by the Government.....3.4: The system shall be installed at the NIST Boulder Labs by the vendor using existing power, water, air, and exhaust connections. Training shall be provided by the contractor for three people for at least two days.....3.5: The system shall undergo pre-acceptance testing at NIST Boulder Labs, and shall demonstrate process performance as required above.....3.6: The system shall include a warranty at least equal to the best warranty terms offered to the general public......3.7: Delivery and installation of the system shall be complete within 180 days of contract award.....4: Optional End-point Detection Equipment: The proposal shall provide separate pricing for the following endpoint detection equipment. The proposal shall indicate how the equipment is integrated into the system, specifying for instance any additional footprint, computers, or facilities required.....OPTION -- ITEM 0002: -- -....4.1: Laser interferometric endpoint monitor -- this technique will be used for monitoring and stopping the etching process when the etch reaches a material of differing reflectivity such as a buried oxide film , backside metal, or backside dielectric film. The proposal shall describe the hardware and software to be included with this option as well as indicate the size of the monitored laser spot and describe the means for positioning the laser beam onto the wafer.....OPTION -- ITEM 0003: -- -....4.2: Plasma optical emission endpoint monitor -- this technique shall be used to monitor the changes in plasma optical emission as the etch completes. The proposal shall describe the hardware and software to be included with this option.....5. Selection Criteria: The technical merit of proposals shall be judged according to the following criteria:....5.1 Experience and Past Performance: 40%. Proposals shall include no fewer than 5 references, including address, phone number, and point-of-contact information for users who are currently operating the make and model of the proposed system in the field. Referenced models need not be of the current production year, but shall be production equipment manufactured within the past 24 months and designed for the purpose, and essentially identical to the equipment described in this specification.....5.2 Hardware Specifications: 25%. The proposal shall address all points in the hardware specifications. For major pieces of third party hardware (pumps, flow controllers, powers supplies, etc.), the manufacturer and manufacturers model number shall be listed.....5.3 Process and Performance: 25%. The proposal shall describe in detail all processes to be delivered with the system. For each process, there should be a complete description of the specific aims of that process, and the typical results achieved for parameters such as etch rate, aspect ratio, sidewall slope, and selectivity. The proposal shall demonstrate that the vendor has developed processes for the proposed system capable of meeting the specifications.....5.4 Installation, Documentation and Warranty: 10%. The proposal shall address all points in the specifications relating to installation, documentation and warranty. Forms and clauses stipulated herein may be downloaded via the internet at the following address: http://www.masc.noaa.gov/masc/amd/prc_cont.html. Interested parties are responsible for accessing and downloading documents and forms from that (or any other) site. Firms without access to the internet may call 303/497-3221 and request that copies of the clauses, provisions, and/or forms be either mailed or faxed to them. Offers shall include a properly completed and signed Standard Form 1449. The firm fixed-prices for Items 0001, 0002, and 0003 shall include all equipment, delivery, installation and training FOB Boulder, Colorado. The following provisions and clauses apply to this solicitation: FAR 52.212-1 (10/00), (provision) Instructions to Offerors -- Commercial Items // FAR 52.212-2 (01/99), (provision) Evaluation -- Commercial Items -- evaluation factors: (1) Past Performance (offerors shall submit a minimum of 5 references with points of contact for similar systems already in the field); (2) Ability of the hardware to meet or exceed specifications; (3) Ability of the process and performance aspects to meet or exceed specifications; (4) how well the installation, documentation and warranty meet or exceed specifications; and (5) price. Technical and past performance, when combined, are somewhat more important than price. // FAR 52.212-3 (05/01), (provision) Offeror Representations and Certifications -- Commercial Items (NOTE: Offerors shall include with their offers a completed copy of the provision at FAR 52.212-3.) // FAR 52.212-4 (05/01), (clause) Contract Terms and Conditions -- Commercial Items // FAR 52.212-5 (05/01), (clause) Contract Terms and Conditions Required to Implement Statutes or Executive Orders -- Commercial Items including the following FAR clauses referenced in FAR 52.212-5, subparagraphs (b) (1), (5), (7), (11), (12), (13), (14), (15), (16), (18), (19), (20), (21), (22), and (24) // FAR 52.217-4 (06/88). Evaluation of Options Exercised at Time of Contract Award. For further information, please contact Doug Hargrove (303-497-3657). Offers are due at 3:00 P.M. on September 18, 2001 and shall be mailed in envelopes clearly marked as proposals and including the solicitation number (52RANB10C034) to: BID DEPOSITORY/ DOC, NOAA, MASC, MC3, Acquisition Management Division, DSRC Room 33-GB506A, 325 Broadway, Boulder, CO 80305-3328. All hand-carried offers must be scanned in Building 22 at 325 Broadway in Boulder, Colorado prior to being delivered to the David Skaggs Research Center, Room 33-GB506A, 325 Broadway, Boulder, CO. If they have not been scanned, they may be refused. E-MAIL OR FACSIMILE OFFERS WILL NOT BE ACCEPTED.

Record

Loren Data Corp. 20010823/66SOL026.HTM (W-233 SN50V5V6)