93 -- SILICON-ON-GLASS WAFER

Notice Date

December 4, 2001

Contracting Office

Bechtel Nevada, Mail Stop NLV 018, Post Office Box 98521, Las Vegas, NV 89193-8521

ZIP Code

89193-8521

Solicitation Number

2002-EF-02

Response Due

December 15, 2002

Point of Contact

Emma Fox, Telephone 702-295-0507, Fax 702-295-1702

Description

Sources Sought: Bechtel Nevada is seeking sources that can provide the following: item 1: 100mm diameter silicon-on-glass wafer top layer shall be 10 micron thick single crystal silicon (<100> orientation, p-type boron doped, > 2000 ohm-cm) second layer shall be 1 micron thick single crystal silicon (<100> orientation, p-type boron doped, < 0.1 ohm-cm) bottom layer shall be 500 micron glass substrate (sapphire, quartz, pyrex, etc.) item 2: 100mm diameter silicon-on-glass wafer top layer shall be 10 micron thick epitaxial silicon (<100> orientation, p-type boron doped, > 2000 ohm-cm) second layer shall be 1 micron thick epitaxial silicon (<100> orientation, p-type boron doped, < 0.1 ohm-cm) bottom layer shall be 500 micron glass substrate (sapphire, quartz, pyrex, etc.) Interested parties should submit a brief synopsis of product and processes for the Epitaxial process by which they grow silicon by layer by layer and the process of bonding of the silicon to the substrate to Emma Fox by Fax, (702) 295-1702 no later than December 15, 2001.

Record

Loren Data Corp. 20011206/93SOL002.HTM (W-338 SN5143R7)